Development of a differential method for analyzing the luminescence spectra of semiconductors

For a number of p+-n structures fabricated from single-crystal silicon by different technologies, the positions of the maximum derivatives of the room-temperature electroluminescence spectra are determined. With good accuracy, the positions of these maxima correspond to the fundamental absorption edge of silicon for absorption at TO-phonon-assisted transitions with the formation of free excitons. In addition to previously reported data, the results of the study prove the high efficiency of the differential method for analyzing the luminescence spectra of semiconductors.