Semiconductor-metal phase transition in LaBi under high pressure

被引：0
|
作者：
N. N. Stepanov
N. V. Morozova
A. E. Kar’kin
I. V. Korobeinikov
A. V. Golubkov
V. V. Kaminskii
机构：
[1] Russian Academy of Sciences,Ioffe Physical
[2] Ural Branch of the Russian Academy of Sciences,Technical Institute
来源：
Physics of the Solid State | 2015年 / 57卷
关键词：
Pressure Dependence; Structural Phase Transition; Coherent Scat Tering Region; Uniform Compression; LaBi;
D O I：
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中图分类号：
学科分类号：
摘要：
The effect of pressure up to 22 GPa on the electrical resistance and thermopower of lanthanum monobismuthide at room temperature has been studied. A semiconductor-metal phase transition in the pressure range of 4–6 GPa has been revealed from the change in the sign of thermopower and the thermal dependence of the electrical resistance of LaBi. The observed inflections in the pressure dependences of the thermopower and electrical resistance of LaBi samples in the pressure range of 8–11 GPa can be ascribed to the structural phase transition from the B1 phase to the PT and B2 phases.
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页码：1639 / 1641
页数：2
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