Kinetic equations and nanocrystal growth in molecular beam epitaxy methods

被引：0

作者：

Trushin Yu.V. ^{[1
]}

Kulikov D.V. ^{[1
]}

Safonov K.L. ^{[1
]}

Rauschenbach B. ^{[2
]}

机构：

[1] St. Petersburg Physics and Technology Center for Research, Education of the Russian Academy of Sciences, St. Petersburg 195220

[2] Leibniz-Institut für Oberfläshenmodifizierunge. V., Leipzig D-04318

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2008年 / 72卷 / 7期

基金：

俄罗斯基础研究基金会;

关键词：

Molecular Beam Epitaxy; Size Distribution Function; Gallium Nitride; Cluster Radius; Gallium Atom;

D O I：

10.3103/S1062873808070150

中图分类号：

学科分类号：

摘要：

The processes of nucleation and growth of GaN, Ge, and InAs nanoclusters in molecular beam epitaxy (conventional and nitrogen-ion-assisted) have been investigated by computer simulation methods. Physical models are proposed to explain the regularities of nanostructure evolution, depending on the epitaxy conditions. The role of nitrogen-ion irradiation, leading to radical changes in the epitaxial growth regime, is revealed. © Allerton Press, Inc 2008.

引用

页码：937 / 940

页数：3

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