Chemical deposition of (311) textured CdIn2S4 thin films

We have successfully deposited cadmium indium sulphide (CdIn2S4) thin films by simple dip method using malonic acid as complexing agent. Variation of thickness with time and temperature were studied. Deposited samples were characterized by X-ray diffraction (XRD). The absorption, electrical and photoelectrochemical properties are also studied. The XRD analysis shows that the film samples are in cubic structure. The optical band gap energy was found to be 2.25 eV. Activation energy was found to be 0.511 and 0.018 eV for higher temperature and lower temperature respectively. For CdIn2S4 photoelectrode, the open circuit voltage and short circuit current are found to be 125 mV and 86 mA respectively. The calculation shows the fill factor is 33.38 %. The power conversion efficiency is found to be 1.22 %.