Self-Trapping Barrier for Phonon Polaron in Anisotropic Crystal

被引：0
|
作者：
A. Shelkan
V. Hizhnyakov
E. Sigmund
机构：
[1] Estonian Academy of Sciences,Institute of Physics
[2] University of Tartu,Physics Department
[3] Technische Universität Cottbus,Institut für Physik
来源：
Journal of Superconductivity | 2000年 / 13卷
关键词：
phonon; polaron; anisotropic crystal;
D O I：
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学科分类号：
摘要：
The energy of the electron wave packet interacting with lattice distortion is considered in anisotropic crystal. Anisotropy of the electron and phonon spectra as well as of the electron–phonon interaction are taken into account. The height of the barrier between free and self-trapped states is calculated in dependence on the anisotropy parameters. The calculation is done numerically, using continuum approximation. The analytical solution is obtained for some cases of quasi-two- and quasi-one-dimensional spectra.
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页码：21 / 25
页数：4
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