Photosensitive structures based on HgGa2S4 single crystals: Preparation and properties

被引：0
|
作者：
V. Yu. Rud’
Yu. V. Rud’
B. Kh. Bairamov
G. A. Il’chuk
V. O. Ukrainets
N. Fernelius
P. G. Shunemann
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,Wright Laboratory
[3] National University Lvivska Politekhnika,undefined
[4] Wright-Patterson AFB,undefined
[5] Lockheed Sanders,undefined
来源：
Semiconductors | 2004年 / 38卷
关键词：
Magnetic Material; Spectral Region; Electromagnetism; Photosensitive Structure;
D O I：
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中图分类号：
学科分类号：
摘要：
Photosensitive structures based on n-HgGa2S4 single crystals were prepared and investigated. It was concluded that HgGa2S4 crystals are promising for the fabrication of photodetectors of natural and linearly polarized light in the short-wavelength spectral region.
引用
收藏
页码：1291 / 1297
页数：6
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