InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

被引：0
|
作者：
L. W. Wu
S. J. Chang
Y. K. Su
T. Y. Tsai
T. C. Wen
C. H. Kuo
W. C. Lai
J. K. Sheu
J. M. Tsai
S. C. Chen
B. R. Huang
机构：
[1] National Cheng Kung University,Institute of Microelectronics, Department of Electrical Engineering
[2] National Central University,Optical Science Center
[3] Hsin-Shi,South Epitaxy Corporation
[4] Tainan County,Institute of Electronics and Information Engineering and Department of Electronic Engineering
[5] National Yunlin University of Science and Technology,undefined
来源：
Journal of Electronic Materials | 2003年 / 32卷
关键词：
InGaN/GaN; short-period superlattice (SPS); multiple-quantum well (MQW); light-emitting diode (LED);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Nitride-based light-emitting diodes (LEDs) with Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10−2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5×100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.
引用
收藏
页码：411 / 414
页数：3
相关论文
共 50 条
  • [1] InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
    Wu, LW
    Chang, SJ
    Su, YK
    Tsai, TY
    Wen, TC
    Kuo, CH
    Lai, WC
    Sheu, JK
    Tsai, JM
    Chen, SC
    Huang, BR
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 411 - 414
  • [2] Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
    Tu, RC
    Tun, CJ
    Shen, JK
    Kuo, WH
    Wang, TC
    Tsai, CE
    Hsu, JT
    Chi, J
    Chi, GC
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) : 206 - 208
  • [3] Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer
    Sheu, JK
    Tsai, JM
    Shei, SC
    Lai, WC
    Wen, TC
    Kou, CH
    Su, YK
    Chang, SJ
    Chi, GC
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) : 460 - 462
  • [4] Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes
    Lee, Kwanjae
    Lee, Cheul-Ro
    Lee, Jin Hong
    Chung, Tae-Hoon
    Ryu, Mee-Yi
    Jeong, Kwang-Un
    Leem, Jae-Young
    Kim, Jin Soo
    OPTICS EXPRESS, 2016, 24 (07): : 7743 - 7751
  • [5] Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice
    SaeidNahaei, Sanam
    Ha, J. D.
    Kim, Jong Su
    Kim, Jin Soo
    Kim, G. H.
    Lee, Dong Kun
    Kang, Tae In
    JOURNAL OF LUMINESCENCE, 2023, 253
  • [6] Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping
    I. A. Prudaev
    I. S. Romanov
    V. V. Kopyev
    V. N. Brudnyi
    A. A. Marmalyuk
    V. A. Kureshov
    D. R. Sabitov
    A. V. Mazalov
    Russian Physics Journal, 2016, 59 : 934 - 937
  • [7] Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
    Lundin, W. V.
    Nikolaev, A. E.
    Sakharov, A. V.
    Zavarin, E. E.
    Valkovskiy, G. A.
    Yagovkina, M. A.
    Usov, S. O.
    Kryzhanovskaya, N. V.
    Sizov, V. S.
    Brunkov, P. N.
    Zakgeim, A. L.
    Cherniakov, A. E.
    Cherkashin, N. A.
    Hytch, M. J.
    Yakovlev, E. V.
    Bazarevskiy, D. S.
    Rozhavskaya, M. M.
    Tsatsulnikov, A. F.
    JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) : 267 - 271
  • [8] Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping
    Prudaev, I. A.
    Romanov, I. S.
    Kopyev, V. V.
    Brudnyi, V. N.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    RUSSIAN PHYSICS JOURNAL, 2016, 59 (07) : 934 - 937
  • [9] InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
    Hung, H.
    Lam, K. T.
    Chang, S. J.
    Chen, C. H.
    Kuan, H.
    Sun, Y. X.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) : H455 - H458
  • [10] Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs
    Chuang, Ricky W.
    Chiu, Yueh Jye
    Yu, Chia Lin
    SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1212 - 1215
12345