Electron transport in silicon carbide natural superlattices under the Wannier-Stark quantization conditions: Basic issues and application prospects

被引:0
|
作者
V. I. Sankin
P. P. Shkrebii
机构
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源
Semiconductors | 2001年 / 35卷
关键词
Silicon; Microwave; Carbide; Electron Transport; Magnetic Material;
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摘要
Hot-electron transport in silicon carbide natural superlattices was investigated. Almost all of the theoretically predicted effects related to the Wannier-Stark localization, such as Bloch oscillations, Stark-phonon resonances, miniband-state localization, and resonance tunneling between the minibands, were observed for the first time. In n+-n−-n+ structures optimized for the measurements at microwave frequencies, the formation of the mobile electric domain was observed in the electric-field range corresponding to the Bloch oscillation conditions; thus, the onset of the microwave oscillations in the 6H-SiC natural superlattice can be stated with a high degree of confidence.
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页码:573 / 578
页数:5
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