Microstructural properties of ZnO:Sn thin films deposited by intermittent spray pyrolysis process

被引：0
|
作者：
F. Kadi Allah
L. Cattin
M. Morsli
A. Khelil
N. Langlois
J. C. Bernède
机构：
[1] Université d’Oran Es-Senia,Faculté des Sciences et des Techniques
[2] LPCM2E,undefined
[3] IMJR,undefined
[4] Université de Nantes,undefined
[5] Nantes Atlantique Universités,undefined
[6] LAMP,undefined
[7] EA 3825,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2010年 / 21卷
关键词：
Spray Pyrolysis; Precursor Concentration; Zinc Oxide Film; Liquid Crystal Display Panel; Thin Film Property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Zinc oxide films have been prepared via spray pyrolysis using a perfume atomizer. ZnCl2 has been used as precursor. The influence of the precursor solution and dopant concentration has been investigated. Homogeneous films are obtained with a precursor concentration ranging between 0.3 and 0.4 M and a SnCl2 dopant concentration of 1–2%. The films exhibit broad band gaps and small conductivity. The microstructural properties of these films have been compared with that of films deposited using a classical nozzle. Films deposited by perfume atomizer are rougher, with smaller grain size, compared to films deposited with a classical nozzle.
引用
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页码：179 / 184
页数：5
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