Si/Si1−xGex epitaxial layers and superlattices. Growth and structural characteristics

被引：0
|
作者：
F. F. Sizov
V. P. Klad’ko
S. V. Plyatsko
A. P. Shevlyakov
Yu. N. Kozyrev
V. M. Ogenko
机构：
[1] Ukrainian National Academy of Sciences,Institute of Semiconductor Physics
[2] National Ukrainian Academy of Sciences,Institute of Surface Chemistry
来源：
Semiconductors | 1997年 / 31卷
关键词：
Spectroscopy; Silicon; Structural Characteristic; Auger; Magnetic Material;
D O I：
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中图分类号：
学科分类号：
摘要：
Si, Ge, and Si1−xGex epitaxial layers and Si/Si1−xGex superlattices have been obtained on (100) and (111) silicon substrates by molecular-beam epitaxy. The growth processes and the structural characteristics and chemical composition of the structures were studied by x-ray diffraction and Auger spectroscopy. It is shown that under the experimental conditions for obtaining Si/Si1−xGex superlattices structurally perfect, strained superlattices with satellites up to ±5 orders can be obtained.
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页码：786 / 788
页数：2
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