Effect of Electron Beam Excitation Pulses on the Lasing Threshold of the Laser Semiconductor Target

被引：0
|
作者：
A. S. Nasibov
V. G. Bagramov
K. V. Berezhnoi
Yu. V. Plokhinskii
I. D. Tasmagulov
机构：
[1] Lebedev Physical Institute,
[2] Russian Academy of Sciences,undefined
来源：
Bulletin of the Lebedev Physics Institute | 2020年 / 47卷
关键词：
electron beam; semiconductor target; laser;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：157 / 161
页数：4
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