Author Correction: Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

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作者：
Akash Laturia
Maarten L. Van de Put
William G. Vandenberghe
机构：
[1] The University of Texas at Dallas,Department of Materials Science and Engineering
来源：
npj 2D Materials and Applications | / 4卷
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摘要：
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
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