The interrelation of surface relief of porous silicon with specific features of Raman spectra

被引：0
|
作者：
B. M. Bulakh
B. R. Jumayev
N. O. Korsunska
O. S. Litvin
T. V. Torchynska
L. Yu. Khomenkova
V. O. Yukhymchuk
机构：
[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics
[2] Instituto Politecnico Nacional,undefined
[3] U.P.A.L.M.,undefined
来源：
Semiconductors | 2002年 / 36卷
关键词：
Silicon; Signal Intensity; Structural Characteristic; Raman Spectrum; Magnetic Material;
D O I：
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中图分类号：
学科分类号：
摘要：
Structural characteristics and Raman spectra of porous silicon layers were investigated. It was demonstrated that the effect of enhancement of the signal intensity of Raman scattering from porous silicon compared with the signal intensity from the substrate is associated with the presence of micrometer-size pores in the samples. A model making it possible to explain this enhancement, the signal shape, and the coincidence of the signal from the porous layer by the shape and location with the line from the Si substrate is suggested.
引用
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页码：558 / 563
页数：5
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