Anodization of aluminum and silicon in plasma of a non-self-sustained glow discharge

被引：0
|
作者：
Yu. A. Burachevsky
V. A. Burdovitsin
E. M. Oks
机构：
[1] Tomsk State University of Control Systems and Radioelectronics,
来源：
Plasma Physics Reports | 2011年 / 37卷
关键词：
Oxide Layer; Glow Discharge; Plasma Physic Report; Oxygen Plasma; Hollow Cathode;
D O I：
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中图分类号：
学科分类号：
摘要：
The results of anodization of aluminum and silicon in an oxygen plasma are presented. The plasma was generated by a non-self-sustained glow discharge with a hollow cathode excited by an electron beam at the oxygen pressure of 20 Pa. The density of the current flowing through the anodized specimen did not exceed 1.5 mA/cm2, and its temperature was 200–250°C. Continuous Al2O3 and SiO2 films were formed on the aluminum and silicon surfaces. The growth rate of the oxide layers was 150–200 nm/h for Al2O3 and 400–800 nm/h for SiO2.
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页码：1242 / 1245
页数：3
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