Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching

被引:0
|
作者
Xiaobing Ren
机构
[1] Materials Physics Group,
[2] National Institute for Materials Science,undefined
[3] PRESTO,undefined
[4] Japan Science and Technology Agency,undefined
[5] Multi-disciplinary Materials Research Centre and State Key Laboratory for Mechanical Behaviour of Materials,undefined
[6] Xi'an Jiaotong University,undefined
来源
Nature Materials | 2004年 / 3卷
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摘要
Ferroelectric crystals are characterized by their asymmetric or polar structures. In an electric field, ions undergo asymmetric displacement and result in a small change in crystal dimension, which is proportional to the applied field1,2. Such electric-field-induced strain (or piezoelectricity) has found extensive applications in actuators and sensors2. However, the effect is generally very small and thus limits its usefulness. Here I show that with a different mechanism, an aged BaTiO3 single crystal can generate a large recoverable nonlinear strain of 0.75% at a low field of 200 V mm−1. At the same field this value is about 40 times higher than piezoelectric Pb(Zr, Ti)O3 (PZT) ceramics and more than 10 times higher than the high-strain Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZN-PT) single crystals3,4,5. This large electro-strain stems from an unusual reversible domain switching (most importantly the switching of non-180° domains) in which the restoring force is provided by a general symmetry-conforming property of point defects. This mechanism provides a general method to achieve large electro-strain effect in a wide range of ferroelectric systems and the effect may lead to novel applications in ultra-large stroke and nonlinear actuators.
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页码:91 / 94
页数:3
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