Influence of CdTe thickness on structural and optical properties of CdTe/ZnTe quantum dots on Si substrates

被引：0
|
作者：
Kee Hong Lim
Jin Chul Choi
Minh Tan Man
Hong Seok Lee
机构：
[1] Yonsei University,Department of Physics
[2] Chonbuk National University,Department of Physics, Research Institute Physics and Chemistry
来源：
Journal of the Korean Physical Society | 2018年 / 72卷
关键词：
Quantum dot; Cadmium telluride; Silicon substrate; Activation energy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have investigated the influence of CdTe thickness on the structural and optical properties of CdTe/ZnTe quantum dots (QDs) on Si substrates using molecular beam epitaxy and atomic layer epitaxy (ALE). Atomic force microscopy images reveal that CdTe QDs are formed after being embedded in an undoped ZnTe matrix, which was controlled by the ALE method. As the size of QDs increases, the photoluminescence (PL) peak shifts towards lower energy and the full-width-at-halfmaximum increases. Through temperature-dependent PL, the increase in activation energy with increasing QD size was confirmed. From this study, the different structural and optical properties of QDs deposited on Si substrates could be understood.
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页码：294 / 299
页数：5
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