High resolution transmission electron microscopy of Ba1−xKxBiO3 superconductor-insulator-superconductor grain boundary tunnel junctions

被引：0
|
作者：
Siu-Wai Chan
A. Kussmaul
E. S. Hellman
E. H. Hartford
机构：
[1] Columbia University,School of Engineering and Applied Science
[2] Lasertron Inc.,Lucent Technologies
[3] Bell Laboratories,undefined
来源：
Journal of Materials Research | 1998年 / 13卷
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摘要：
High angle boundaries in Ba1−xKxBiO3 are superconductor-insulator-superconductor (SIS) Josephson tunnel junctions of a quality unequaled among the high temperature superconducting oxides. Electron microscopy of 24° [001] tilt boundaries reveals nominally symmetric and straight boundaries of aperiodic structure with reappearing structural units. Low {hk0} atomistic facets are predominant. A segregation layer of only 1 nm thick is identified straddling the boundary. This layer which forms naturally is insulating, pin-hole free, and surprisingly robust with a breakdown voltage which exceeds 1 × 106 V/cm, yet thin enough to allow quasiparticle tunneling, yielding reliable gap energies for theoretical comparison.
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页码：1774 / 1779
页数：5
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