Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si/SiO2 interface

被引：0
|
作者：
N. I. Bochkareva
S. A. Khorev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
Oxide; Oxygen; Silicon; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The behavior of the electron density at the Si/SiO2 interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si. The results are explained within a model in which the “metallic” character of the temperature behavior of the conductivity reflects a redistribution of electron charge between the oxide and the silicon lattice in the vicinity of characteristic temperatures of the oxygen subsystem of the oxide.
引用
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页码：1212 / 1215
页数：3
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