Image contrast of impurity regions of semiconductor crystals in scanning electron microscopy

被引：4
|
作者：
E. I. Rau
A. M. Tagachenkov
机构：
[1] Moscow State University,Department of Physics
[2] Russian Academy of Sciences,Institute of Nanotechnology of Microelectronics
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2013年 / 77卷 / 8期
关键词：
Work Function; Semiconductor Crystal; Type Semiconductor; Dope Region; Impurity Section;
D O I：
10.3103/S1062873813080352
中图分类号：
学科分类号：
摘要：
A critical survey of the current state of the problem of visualizing local impurity regions of semiconductor crystals in a scanning electron microscope (SEM) is presented. A new physicotechnical solution for monitoring impurity distributions in doped regions that allows us to increase the contrast between images of impurity sectors in a wide range of concentrations is proposed.
引用
收藏
页码：943 / 947
页数：4
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