Growth of AgGaTe2 Layers by a Closed-Space Sublimation Method

被引：0
|
作者：
Aya Uruno
Masakazu Kobayashi
机构：
[1] Waseda University,Department of Electrical Engineering and Bioscience
[2] Waseda University,Kagami Memorial Research Institute for Materials Science and Technology
来源：
Journal of Electronic Materials | 2013年 / 42卷
关键词：
Closed-space sublimation method; chalcopyrite compound; AgGaTe;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ–2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.
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页码：859 / 862
页数：3
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