Specific features of the growth, structure, and main physicochemical properties of FeGa 2 Se 4 single crystals

被引:4
|
作者
Pauliukavets S.A. [1 ]
Bychek I.V. [2 ]
Patapovich M.P. [1 ]
机构
[1] Belarusian State Academy of Telecommunications, Minsk
[2] Belarussian State University of Informatics and Radioelectronics, Minsk
关键词
Bridgman method; Density; Melting temperature; Microhardness; Parameters of hyperfine interaction of iron ions; Physicochemical properties; Single crystals;
D O I
10.1134/S2075113318020223
中图分类号
学科分类号
摘要
FeGa 2 Se 4 single crystals belonging to the promising class of diluted magnetic semiconductors of the AB 2 X 4 type (A is Mn, Fе, Co, or Ni; B is Ga or In; and X is S, Sе, or Te) are investigated; this compound is currently used for designing solid-state magnetically controlled devices. Optically homogeneous bulk FeGa 2 Se 4 single crystals ~14 mm in diameter and ~50 mm long are obtained for the first time from melt by the modified Bridgman method. The elemental composition of the crystals is determined by X-ray spectral microprobe analysis; it corresponds to the specified composition in the initial charge. It is established by X-ray diffraction analysis that this compound is crystallized into a cubic sphalerite-type structure with unit-cell parameter a = 5.498 ± 0.005 Å. The melting and crystallization temperatures of the grown FeGa 2 Se 4 single crystals are determined by differential thermal analysis. The melting temperature is 1283 K. The microhardness of the single crystals is measured for the first time, the density is determined by the pycnometric method, and the parameters of hyperfine interaction of iron ions are found on the basis of the Mössbauer spectra. © A.V. Alekseev, D.Yu. Dubov, M.R. Predtechenskiy, 2017 and Pleiades Publishing, Ltd., 2018.
引用
收藏
页码:207 / 211
页数:4
相关论文
共 50 条
  • [1] Growth, structure and magnetic properties of ZnCr2Se4-single crystals doped by dysprosium
    Jendrzejewska, Izabela
    Zajdel, Pawel
    Maciazek, Ewa
    Sozanska, Maria
    JOURNAL OF CRYSTAL GROWTH, 2014, 401 : 697 - 701
  • [2] Growth and structure of Zn1-xMnxCr2Se4 single crystals
    Jendrzejewska, Izabela
    Waskowska, Alicja
    Augustyn, Elzbieta
    APPLIED CRYSTALLOGRAPHY XX, 2007, 130 : 81 - +
  • [3] Synthesis, Structure, and Physicochemical Characteristics of Zn1-xRexCr2Se4 Single Crystals
    Jendrzejewska, Izabela
    Gron, Tadeusz
    Kusz, Joachim
    Stoklosa, Zbigniew
    Pietrasik, Ewa
    Goryczka, Tomasz
    Sawicki, Bogdan
    Goraus, Jerzy
    Jampilek, Josef
    Witkowska-Kita, Beata
    MATERIALS, 2023, 16 (13)
  • [4] GROWTH AND PROPERTIES OF SINGLE CRYSTALS OF FERROMAGNETIC SEMICONDUCTOR CDCR2SE4
    VONPHILIPSBORN, H
    HELVETICA PHYSICA ACTA, 1967, 40 (07): : 810 - +
  • [5] GROWTH, THERMODYNAMIC AND MAGNETOSTRUCTURAL STUDY OF FEGA2O4 SINGLE-CRYSTALS
    LECCABUE, F
    PANIZZIERI, R
    WATTS, BE
    FIORANI, D
    AGOSTINELLI, E
    TESTA, A
    PAPARAZZO, E
    JOURNAL OF CRYSTAL GROWTH, 1991, 112 (04) : 644 - 650
  • [6] Growth, structure, and thermal expansion anisotropy of FeIn2Se4 single crystals
    Bodnar, I. V.
    Viktorov, I. A.
    Pavlyukovets, S. A.
    INORGANIC MATERIALS, 2010, 46 (06) : 604 - 608
  • [7] Growth, structure, and thermal expansion anisotropy of FeIn2Se4 single crystals
    I. V. Bodnar
    I. A. Viktorov
    S. A. Pavlyukovets
    Inorganic Materials, 2010, 46 : 604 - 608
  • [8] Growth, structure and characterization of physico-chemical and magnetic properties of CdCr2Se4:Mn single crystals
    Jendrzejewska, Izabela
    Gron, Tadeusz
    Kusz, Joachim
    Goraus, Jerzy
    Kita, Andrzej
    Barsova, Zoia
    Slebarski, Andrzej
    Fijalkowski, Marcin
    Pietrasik, Ewa
    Zajdel, Pawel
    Duda, Henryk
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 735 : 480 - 488
  • [9] CeSi2-δ single crystals:: growth features and properties
    Souptel, D
    Behr, G
    Löser, W
    Teresiak, A
    Drotziger, S
    Pfleiderer, C
    JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) : 606 - 616
  • [10] Electrical properties of FeIn2Se4 single crystals
    N. N. Niftiev
    M. A. Alidzhanov
    O. B. Tagiev
    M. B. Muradov
    Semiconductors, 2003, 37 : 165 - 167