Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

被引：0
|
作者：
Yasuyuki Kobayashi
Kazuhide Kumakura
Tetsuya Akasaka
Toshiki Makimoto
机构：
[1] NTT Basic Research Laboratories,
[2] Nippon Telegraph and Telephone Corporation 3-1,undefined
[3] Morinosato Wakamiya,undefined
[4] Atsugi,undefined
[5] Kanagawa 243-0198,undefined
[6] Japan,undefined
来源：
Nature | 2012年 / 484卷
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学科分类号：
摘要：
Introducing an extremely thin layer of boron nitride between a sapphire substrate and the gallium nitride semiconductor grown on it is shown to facilitate the transfer of the resulting nitride structures to more flexible and affordable substrates.
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页码：223 / 227
页数：4
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