Evolution of the level anticrossing signal in magnetoluminescence of localized excitons in the GaSe–GaTe solid solution

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作者
A. N. Starukhin
D. K. Nelson
B. S. Razbirin
D. L. Fedorov
D. K. Syunyaev
机构
[1] Russian Academy of Sciences,Ioffe Physical
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关键词
Magnetic Field Dependence; Exciton State; Exciton Emission; Triplet Exciton; Localize Exciton;
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摘要
The time dependence of the Zeeman-sublevel anticrossing signal in triplet localized exciton emission in the GaSe0.87Te0.13 semiconductor solid solution has been studied by the time-resolved spectroscopy method under conditions of unpolarized pumping. It has been shown that the anticrossing signal shape changes significantly for the lifetime t of localized excitons. At the time point t = 0, the anticrossing signal is not detected; as t increases, a maximum is formed in the dependence of the exciton emission intensity on the magnetic field (at this stage, the anticrossing signal shape is identical to that observed under conditions of steady-state excitation), which is split into a doublet as t further increases. A theoretical interpretation of the observed time dependence of the Zeeman-sublevel anticrossing signal in localized exciton emission has been proposed. The fine structure parameters and lifetimes of the triplet localized excitons have been determined in different spin states by comparing theory and experiment.
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页码:1937 / 1943
页数:6
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共 16 条
  • [1] Evolution of the level anticrossing signal in magnetoluminescence of localized excitons in the GaSe-GaTe solid solution
    Starukhin, A. N.
    Nelson, D. K.
    Razbirin, B. S.
    Fedorov, D. L.
    Syunyaev, D. K.
    [J]. PHYSICS OF THE SOLID STATE, 2015, 57 (10) : 1937 - 1943
  • [2] Dynamics of polarized magnetoluminescence of localized excitons in mixed GaSe-GaTe crystals
    Starukhin, A. N.
    Nelson, D. K.
    Razbirin, B. S.
    Fedorov, D. L.
    Syunyaev, D. K.
    [J]. PHYSICS OF THE SOLID STATE, 2015, 57 (07) : 1318 - 1324
  • [3] Dynamics of polarized magnetoluminescence of localized excitons in mixed GaSe-GaTe crystals
    A. N. Starukhin
    D. K. Nelson
    B. S. Razbirin
    D. L. Fedorov
    D. K. Syunyaev
    [J]. Physics of the Solid State, 2015, 57 : 1318 - 1324
  • [4] LEVEL-ANTICROSSING EFFECT ON THE MAGNETOLUMINESCENCE OF THE TRIPLET INDIRECT BOUND EXCITON IN GASE
    ANNO, H
    NISHINA, Y
    [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (05) : 439 - 442
  • [5] Selective laser spectroscopy of localized excitons in GaSe-GaTe solid solutions in a magnetic field
    A. N. Starukhin
    B. S. Razbirin
    A. V. Chugreev
    M. Happ
    F. Henneberger
    [J]. Physics of the Solid State, 1999, 41 : 1271 - 1274
  • [6] Selective laser spectroscopy of localized excitons in GaSe-GaTe solid solutions in a magnetic field
    Starukhin, AN
    Razbirin, BS
    Chugreev, AV
    Happ, M
    Henneberger, F
    [J]. PHYSICS OF THE SOLID STATE, 1999, 41 (08) : 1271 - 1274
  • [7] Optical building of localized excitons in GaSe-GaS solid solutions
    Nelson, DK
    Razbirin, BS
    Starukhin, AN
    Chugreev, AV
    [J]. FIZIKA TVERDOGO TELA, 1996, 38 (08): : 2380 - 2386
  • [8] PHOTOLUMINESCENCE STUDIES OF LOCALIZED EXCITONS IN GASE1-XSX SOLID-SOLUTIONS
    SASAKI, Y
    SERIZAWA, H
    NISHINA, Y
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1003 - 1006
  • [9] Selective laser spectroscopy of localized excitons in GaSe1-xSx solid solutions
    Nelson, DK
    Razbirin, BS
    Starukhin, AN
    Chugreev, AV
    Panfilov, AG
    [J]. FIZIKA TVERDOGO TELA, 1995, 37 (08): : 2309 - 2318
  • [10] Time dependence of a level anticrossing signal in exciton emission from a GaSe crystal under resonant excitation conditions
    A. N. Starukhin
    D. K. Nelson
    B. S. Razbirin
    [J]. JETP Letters, 2008, 87 : 243 - 247