Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures

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作者
Shuai Zhang
Yang Liu
Zhiyuan Sun
Xinzhong Chen
Baichang Li
S. L. Moore
Song Liu
Zhiying Wang
S. E. Rossi
Ran Jing
Jordan Fonseca
Birui Yang
Yinming Shao
Chun-Ying Huang
Taketo Handa
Lin Xiong
Matthew Fu
Tsai-Chun Pan
Dorri Halbertal
Xinyi Xu
Wenjun Zheng
P. J. Schuck
A. N. Pasupathy
C. R. Dean
Xiaoyang Zhu
David H. Cobden
Xiaodong Xu
Mengkun Liu
M. M. Fogler
James C. Hone
D. N. Basov
机构
[1] Columbia University,Department of Physics
[2] Columbia University,Department of Mechanical Engineering
[3] Harvard University,Department of Physics
[4] Stony Brook University,Department of Physics and Astronomy
[5] University of Washington,Department of Physics
[6] Columbia University,Department of Chemistry
[7] University of California,Department of Physics
[8] San Diego,State Key Laboratory of Low
[9] Tsinghua University,Dimensional Quantum Physics and Department of Physics
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摘要
Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) materials. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe2. The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices.
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