Impacts of substitution of BaTiO3 on structure, dielectric, transport, and magnetic properties of multiferroic BiFe0.5Mn0.5O3

Multiferroic ceramics Bi1-xBaxFe0.5-xTixMn0.5O3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${Bi}_{1-x}{Ba}_{x}{Fe}_{0.5-x}{Ti}_{x}{Mn}_{0.5}{O}_{3}$$\end{document} with 0≤x≤0.2\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$0\le x\le 0.2$$\end{document} has been prepared using solid-state method with sintering under N2 atmosphere. A detailed study on the interaction between the dielectric, magnetic, and transport properties in ceramic samples is referred. Rhombohedral phase was established for all the compositions. Dielectric properties have been improved by the reduction of dielectric loss ( for x = 0.2, tan δ ⁓ 0.17). conduction mechanism have been deduced from the analysis of current density, no signature of Poole Frenkel (PF) has been designated, while the analyzed samples showed a predominance of the Ohmic conduction mechanism and the space charge-limited conduction (SCLC) mechanism. Moreover, ac conductivity study suggests a mechanism for small-polaron hopping at low temperatures, followed by the transfer of ionized oxygen vacancies at high temperatures. Besides, saturated hysteresis loops are observed in all BT concentrations. The highest saturation magnetization (MS≈0.107emu/g\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{M}}_{\text{S}}\approx 0.107 \text{e}\text{m}\text{u}/\text{g}$$\end{document}) was found for the composition x = 0.1.