SIMS depth profiling of Pd/B4C, Ni/C, and Cr/Sc multilayer metal structures using registration of cluster secondary ions: The problem of depth resolution enhancement

被引：2
|
作者：
Drozdov M.N. [1 ]
Drozdov Y.N. [1 ]
Barysheva M.M. [1 ]
Polkovnikov V.N. [1 ]
Chkhalo N.I. [1 ]
机构：
[1] Institute for Physics of Microstructures, Russian Academy of Sciences
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2011年 / 75卷 / 1期
基金：
俄罗斯基础研究基金会;
关键词：
Depth Profile; Depth Resolution; Unit Depth; Auger Depth Profile; Good Depth Resolution;
D O I：
10.3103/S1062873811010096
中图分类号：
学科分类号：
摘要：
The possibility of minimizing matrix effects during the SIMS depth profiling of multilayer metal structures is investigated, based on the use of cluster secondary ions that include a combination of the element to be analyzed and sputtering cesium or oxygen ions. For Pd/B4C, Ni/C, and Cr/Sc structures, the use of cluster secondary ions enabled us to substantially enhance depth resolution up to 1-2 nm. © 2011 Allerton Press, Inc.
引用
收藏
页码：100 / 104
页数：4
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