TEM and STEM Studies on the Cross-sectional Morphologies of Dual-/Tri-layer Broadband SiO2 Antireflective Films

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作者
Shuangyue Wang
Hongwei Yan
Dengji Li
Liang Qiao
Shaobo Han
Xiaodong Yuan
Wei Liu
Xia Xiang
Xiaotao Zu
机构
[1] University of Electronic Science and Technology of China,Institute of Fundamental and Frontier Sciences
[2] University of Electronic Science and Technology of China,School of Physical Electronics
[3] Chinese Academy of Science,Dalian National Lab for Clean Energy Dalian Institute of Chemical Physics
[4] China Academy of Engineering Physics,undefined
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Sol–gel process; Antireflective film; TEM; STEM; Density ratio;
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摘要
Dual-layer and tri-layer broadband antireflective (AR) films with excellent transmittance were successfully fabricated using base-/acid-catalyzed mixed sols and propylene oxide (PO) modified silica sols. The sols and films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance (NMR), transmission electron microscope (TEM), and scanning transmission electron microscope (STEM). FTIR and TEM results suggest that the PO molecules were covalently bonded to the silica particles and the bridge structure existing in PO modified silica sol is responsible for the low density of the top layer. The density ratio between different layers was measured by cross-sectional STEM, and the results are 1.69:1 and 2.1:1.7:1 from bottom-layer to top-layer for dual-layer and tri-layer films, respectively. The dual-layer film demonstrates good stability with 99.8% at the central wavelength of 351 nm and nearly 99.5% at the central wavelength of 1053 nm in laser system, and for the tri-layer AR film, the maximum transmittance reached nearly 100% at both the central wavelengths of 527 and 1053 nm.
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