Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures

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作者
Lingfei Wang
Qiyuan Feng
Yoonkoo Kim
Rokyeon Kim
Ki Hoon Lee
Shawn D. Pollard
Yeong Jae Shin
Haibiao Zhou
Wei Peng
Daesu Lee
Wenjie Meng
Hyunsoo Yang
Jung Hoon Han
Miyoung Kim
Qingyou Lu
Tae Won Noh
机构
[1] Institute for Basic Science (IBS),Center for Correlated Electron Systems
[2] Seoul National University,Department of Physics and Astronomy
[3] Chinese Academy of Sciences,Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory
[4] University of Science and Technology of China,Hefei National Laboratory for Physical Sciences at the Microscale
[5] Seoul National University,Department of Materials Science and Engineering and Research Institute of Advanced Materials
[6] National University of Singapore,Department of Electrical and Computer Engineering
[7] Sungkyunkwan University,Department of Physics
来源
Nature Materials | 2018年 / 17卷
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摘要
Magnetic skyrmions are topologically protected whirling spin texture. Their nanoscale dimensions, topologically protected stability and solitonic nature, together are promising for future spintronics applications. To translate these compelling features into practical spintronic devices, a key challenge lies in achieving effective control of skyrmion properties, such as size, density and thermodynamic stability. Here, we report the discovery of ferroelectrically tunable skyrmions in ultrathin BaTiO3/SrRuO3 bilayer heterostructures. The ferroelectric proximity effect at the BaTiO3/SrRuO3 heterointerface triggers a sizeable Dzyaloshinskii–Moriya interaction, thus stabilizing robust skyrmions with diameters less than a hundred nanometres. Moreover, by manipulating the ferroelectric polarization of the BaTiO3 layer, we achieve local, switchable and nonvolatile control of both skyrmion density and thermodynamic stability. This ferroelectrically tunable skyrmion system can simultaneously enhance the integratability and addressability of skyrmion-based functional devices.
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页码:1087 / 1094
页数:7
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