Graphene nanoribbons: current status, challenges and opportunities

被引:0
|
作者
Shuo Lou
Bosai Lyu
Xianliang Zhou
Peiyue Shen
Jiajun Chen
Zhiwen Shi
机构
[1] Shanghai Jiao Tong University,Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy
[2] Nanjing University,Collaborative Innovation Centre of Advanced Microstructures
[3] Shanghai Jiao Tong University,Tsung
来源
Quantum Frontiers | / 3卷 / 1期
关键词
Graphene nanoribbons; Fabrication methods; Field-effect transistor device; Quantum dots; Spintronic devices;
D O I
10.1007/s44214-024-00050-8
中图分类号
学科分类号
摘要
Graphene nanoribbons (GNRs) are narrow strips of graphene with widths ranging from a few nanometers to a few tens of nanometers. GNRs possess most of the excellent properties of graphene, while also exhibiting unique physical characteristics not found in graphene, such as an adjustable band gap and spin-polarized edge states. These properties make GNRs an appealing candidate for carbon-based electronics. In this review, we begin by introducing the edge geometry and electronic bands of GNRs. We then discuss various methods for fabricating GNRs and analyze the characteristics of each method. Subsequently, the performance of GNR field-effect transistor devices obtained from a few representative GNR fabrication methods is discussed and compared. We also investigate the use of GNRs as quantum dots and spintronic devices. Finally, the challenges and opportunities of GNRs as a quantum material for next-generation electronics and spintronics are explored and proposed.
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