Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films

被引:0
|
作者
Chun-Lin Jia
Shao-Bo Mi
Knut Urban
Ionela Vrejoiu
Marin Alexe
Dietrich Hesse
机构
[1] Institute of Solid State Research and Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons,
[2] Research Centre Jülich,undefined
[3] Max Planck Institute of Microstructure Physics,undefined
来源
Nature Materials | 2008年 / 7卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Ferroelectrics are materials exhibiting spontaneous electric polarization due to dipoles formed by displacements of charged ions inside the crystal unit cell. Their exceptional properties are exploited in a variety of microelectronic applications. As ferroelectricity is strongly influenced by surfaces, interfaces and domain boundaries, there is great interest in exploring how the local atomic structure affects the electric properties. Here, using the negative spherical-aberration imaging technique in an aberration-corrected transmission electron microscope, we investigate the cation–oxygen dipoles near 180∘ domain walls in epitaxial PbZr0.2Ti0.8O3 thin films on the atomic scale. The width and dipole distortion across a transversal wall and a longitudinal wall are measured, and on this basis the local polarization is calculated. For the first time, a large difference in atomic details between charged and uncharged domain walls is reported.
引用
收藏
页码:57 / 61
页数:4
相关论文
共 50 条
  • [1] Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films
    Jia, Chun-Lin
    Mi, Shao-Bo
    Urban, Knut
    Vrejoiu, Ionela
    Alexe, Marin
    Hesse, Dietrich
    [J]. NATURE MATERIALS, 2008, 7 (01) : 57 - 61
  • [2] Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films
    Tang, Y. L.
    Zhu, Y. L.
    Wang, Y. J.
    Wang, W. Y.
    Xu, Y. B.
    Ren, W. J.
    Zhang, Z. D.
    Ma, X. L.
    [J]. SCIENTIFIC REPORTS, 2014, 4
  • [3] Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films
    Y. L. Tang
    Y. L. Zhu
    Y. J. Wang
    W. Y. Wang
    Y. B. Xu
    W. J. Ren
    Z. D. Zhang
    X. L. Ma
    [J]. Scientific Reports, 4
  • [4] Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials
    Li, Linze
    Gao, Peng
    Nelson, Christopher T.
    Jokisaari, Jacob R.
    Zhang, Yi
    Kim, Sung-Joo
    Melville, Alexander
    Adamo, Carolina
    Schlom, Darrell G.
    Pan, Xiaoqing
    [J]. NANO LETTERS, 2013, 13 (11) : 5218 - 5223
  • [5] Ferroelectric charged domain walls in an applied electric field
    Gureev, M. Y.
    Mokry, P.
    Tagantsev, A. K.
    Setter, N.
    [J]. PHYSICAL REVIEW B, 2012, 86 (10)
  • [6] Theoretical study of atomic relaxation in 90 domain walls of ferroelectric perovskite films
    Ricinschi, D
    Ishibashi, Y
    Okuyama, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (9B): : 6803 - 6807
  • [7] Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films
    Zheng, Yunzhe
    Zhang, Yuke
    Xin, Tianjiao
    Xu, Yilin
    Qu, Shuangquan
    Zheng, Junding
    Gao, Zhaomeng
    Zhong, Qilan
    Wang, Yiwei
    Feng, Xiaoyu
    Zheng, Yonghui
    Cheng, Yan
    Shao, Ruiwen
    Lin, Fang
    Lin, Xiaoling
    Tian, He
    Huang, Rong
    Duan, Chungang
    Lyu, Hangbing
    [J]. MATERIALS TODAY NANO, 2023, 24
  • [8] Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films
    Li, Xin
    Li, Cheng
    Zhou, Linming
    Guo, Xiangwei
    Huang, Yuhui
    Zhang, Hui
    Dong, Shurong
    Wu, Yongjun
    Hong, Zijian
    [J]. ADVANCED ELECTRONIC MATERIALS, 2024,
  • [9] Controlled creation and displacement of charged domain walls in ferroelectric thin films
    L. Feigl
    T. Sluka
    L. J. McGilly
    A. Crassous
    C. S. Sandu
    N. Setter
    [J]. Scientific Reports, 6
  • [10] Controlled creation and displacement of charged domain walls in ferroelectric thin films
    Feigl, L.
    Sluka, T.
    McGilly, L. J.
    Crassous, A.
    Sandu, C. S.
    Setter, N.
    [J]. SCIENTIFIC REPORTS, 2016, 6