Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique

被引：0

作者：

G. Perna

V. Capozzi

A. Minafra

M. Pallara

M. Ambrico

机构：

[1] Facoltà di Medicina e Chirurgia dell'Università di Foggia,

[2] Viale L. Pinto,undefined

[3] 71100 Foggia,undefined

[4] Italy,undefined

[5] Istituto Nazionale di Fisica della Materia,undefined

[6] Unità di Bari,undefined

[7] Via Amendola 173,undefined

[8] 70126 Bari,undefined

[9] Italy,undefined

[10] Dipartimento Interateneo di Fisica dell'Università di Bari,undefined

[11] Via Amendola 173,undefined

[12] 70126 Bari,undefined

[13] Italy,undefined

[14] Dipartimento Geomineralogico dell'Università di Bari,undefined

[15] Via Amendola 173,undefined

[16] 70126 Bari,undefined

[17] Italy,undefined

[18] Istituto di Metodologie Inorganiche e dei Plasmi del C.N.R.,undefined

[19] Via Orabona 4,undefined

[20] 70126 Bari,undefined

[21] Italy,undefined

来源：

The European Physical Journal B - Condensed Matter and Complex Systems | 2003年 / 32卷

关键词：

PACS. 78.40.Fy Semiconductors – 78.55.Et II-VI semiconductors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin films of n-type CdSe have been grown on a quartz substrate by laser ablating a target obtained by mixing CdSe and metallic In powders. The effects of different doping concentration of In have been investigated. X-ray diffraction spectra show that at low In density only the CdSe lattice is present in the deposited film, whereas CdIn2Se4 and InSe compounds are deposited at higher In concentration. Band gap narrowing and band tails are observed in the absorption spectra when the In concentration increases. Photoluminescence spectra show band-band recombinations from 10 K to room temperature.

引用

页码：339 / 344

页数：5

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