Class-AB Flipped Voltage Follower Cell with High Current Driving Capability and Low Output Resistance for High Frequency Applications

In this paper, a class-AB flipped voltage follower cell with high current driving capability is proposed. The proposed flipped voltage follower (FVF) cell offers increased current sourcing capability and large input/output voltage swing due to the use of bulk-driven and level shifter techniques, respectively. Further, it uses an additional NMOS transistor connected between output and ground terminals to increase the current sinking capability and to reduce the output resistance. The stability analysis has been performed by using Routh–Hurwitz stability criteria which confirms that the proposed FVF cell is stable. The proposed FVF cell also offers a high symmetrical slew rate. The proposed FVF cell has been simulated in Cadence virtuoso analog design environment using BSIM3v3 180 nm CMOS technology and simulation results are presented to validate the effectiveness of the proposed circuit.