Structural, electrical, and optical properties of DVT-grown SnX (X = S, Se) crystals

Transition metal chalcogenides have become highly accessible nowadays for their outstanding sensing ability. Specifically, tin sulfide (SnS) and tin selenide (SnSe) are effective candidates for future electronic devices. Here, we synthesized P-type SnS and SnSe-layered crystals. The layered growth mechanism, high crystallanity, and phase transition of grown materials were confirmed by SEM, HR-TEM, and XRD, respectively. The X-ray diffractogram reveals the orthorhombic phase of grown SnX (X = S, Se). The formation of structure and binding energy were confirmed by X-ray photoelectron spectroscopy (XPS). The study of temperature-dependent vibrational mode is carried out for SnX (X = S, Se). The temperature-dependent resistivity measurement was performed. The hall effect measurement was performed at room temperature to calculate the carrier concentration, conductivity, and mobility. The optical properties of SnS and SnSe have been studied. This study estimates the suitability of the SnX (S, Se) crystals for the fabrication of optoelectronic devices.