Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

被引：0
|
作者：
Chikara Onodera
Masaaki Yoshida
Tadayoshi Shoji
Tsunemasa Taguchi
机构：
[1] Aomori Prefectural Towada Technical Senior High School,Electronic Engineering Course
[2] Hachinohe National College of Technology,Department of Electrical and Computer Engineering
[3] Tohoku Institute of Technology,Department of Electronics
[4] Yamaguchi University,Department of Electrical and Electronic Engineering
来源：
Optical Review | 2010年 / 17卷
关键词：
ZnS; Be-chalcogenide; ultraviolet laser; gain coefficient; thresold current density;
D O I：
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中图分类号：
学科分类号：
摘要：
We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm2. By comparing the measured Jth in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.
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页码：159 / 160
页数：1
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