Electrodeposited heterojunctions based on cadmium chalcogenide, CdX (X = S, Se, Te) and polyaniline

被引：0
|
作者：
S. S. Joshi
C. D. Lokhande
机构：
[1] Shivaji University,Thin film Physics Laboratory, Department of Physics
来源：
Journal of Materials Science | 2007年 / 42卷
关键词：
Polyaniline; Ideality Factor; Stainless Steel Substrate; Chalcogen; Flat Band Potential;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have fabricated heterojunctions based on all-electrodeposited cadmium chalcogenides CdX (X = S, Se, Te) and polyaniline thin film. Cadmium chalcogenide films were deposited onto low cost stainless steel substrate using potentiostatic mode. Over Cd chalcogenide film, polyaniline was deposited potentiodynamically. The junctions were heated at 353 K for 20 min and junction current–voltge (I–V) and capacitance–voltage (C–V) plots were studied. From I–V plots, junction ideality factors for heterojunction based on CdS, CdSe and CdTe were calculated to be 1.55, 1.60 and 1.89, respectively. Studies on C-V plots revealed flat band potentials for heterojunction based on CdS, CdSe and CdTe to be + 0.4, + 0.45, and + 0.64 V, respectively.
引用
收藏
页码：1304 / 1308
页数：4
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