Plasma-based synthesis of graphene and applications: a focused review

被引:9
|
作者
Zafar, Muhammad Adeel [1 ]
Jacob, Mohan V. [1 ]
机构
[1] James Cook Univ, Coll Sci & Engn, Elect Mat Lab, Townsville, Qld 4811, Australia
关键词
Plasma-enhanced chemical vapor deposition; Atmospheric pressure microwave plasma; Process parameters; Growth of graphene; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; GAS-PHASE SYNTHESIS; CARBON NANOTUBE; MICROWAVE PLASMA; VERTICAL GRAPHENE; PECVD GROWTH; OXYGEN REDUCTION; QUANTUM DOTS; HIGH-QUALITY;
D O I
10.1007/s41614-022-00102-3
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Graphene is a highly sought-after material for a wide range of applications, particularly in areas such as energy harvesting and storage, electronics, electrochemical sensors, biomedical, composites, and coatings. The synthesis of high-quality graphene is a precondition for its real-time application. However, conventional synthesis methods have certain drawbacks including laborious procedures and structural defects in graphene nanosheets. Plasma-based synthesis techniques such as plasma-enhanced chemical vapor deposition and atmospheric pressure microwave plasma are high-tech synthesis practices that can produce graphene without any solvents in a few seconds. This article reviews these state-of-the-art techniques emphasizing mainly their process parameters for the synthesis of high-grade graphene, which is defect-free, and comprises mono to few layers, great carrier mobility, and high purity. The applications of as-synthesized graphene in various fields are also provided. Moreover, the potential breakthroughs and the prospect of these techniques are also discussed in this work.
引用
收藏
页数:38
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