Read-out ASIC for microstrip detectors

被引：8

作者：

Atkin E.V. ^{[1
]}

Klyuev A.D. ^{[1
]}

Silaev A.S. ^{[1
]}

Shumikhin V.V. ^{[1
]}

Voronin A.G. ^{[2
]}

Kudryuashov I.A. ^{[2
]}

Podorozhnyi D.M. ^{[2
]}

Fedenko A.Y. ^{[2
]}

机构：

[1] National Research Nuclear University MEPhI, Moscow 115409

[2] Skobeltsyn Institute of Nuclear Physics, Moscow State University

来源：

Russian Microelectronics | 2011年 / 40卷 / 1期

关键词：

RUSSIAN Microelectronics; Silicon Detector; Input Transistor; Digital Part; Charge Sensitive Amplifier;

D O I：

10.1134/S1063739711010021

中图分类号：

学科分类号：

摘要：

The main results of designing a 32-channel integrated microcircuit for microstrip detectors of the Nuclon Project of Roskosmos are considered. The microcircuit is implemented by using 0.35 μm CMOS technology of AMIS (Belgium). The description of the integrated microcircuit and its main electrical parameters, features of the circuit technology, and crystal topology are presented. Record parameters of the dynamic range of readable signals (more than 100 pC) with a detector capacity of up to 100 pF exhibited by the microcircuit. © 2011 Pleiades Publishing, Ltd.

引用

页码：52 / 58

页数：6

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A. D. Klyuev
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A. G. Voronin
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D. M. Podorozhnyi
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