Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET

被引：73

作者：

Han, Joon-Kyu ^{[1
]}

Seo, Myungsoo ^{[1
]}

Kim, Wu-Kang ^{[1
]}

Kim, Moon-Seok ^{[1
]}

Kim, Seong-Yeon ^{[1
]}

Kim, Myung-Su ^{[1
]}

Yun, Gyeong-Jun ^{[1
]}

Lee, Geon-Beom ^{[1
]}

Yu, Ji-Man ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Leaky integrate-and-fire (LIF) neuron; neuromorphic computing system; neuron inhibition; single transistor latch (STL); SOI MOSFET; spiking neural network (SNN); BIRISTOR;

D O I：

10.1109/LED.2019.2958623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, a leaky integrate-and-fire (LIF) neuron with both excitatory and inhibitory characteristics is demonstrated using a single MOSFET. No additional circuits such as comparator, reset circuit, or current-to-voltage converter as well as a membrane capacitor are needed, and thus the LIF neuron is realized with a footprint of 6 F-2. Because of its gate terminal, neuron firing is selectively inhibited, which can improve the energy efficiency of the neuromorphic system by inducing sparse activity. Furthermore, the spiking property of the neuron can be controlled by the gate, which can provide additional room to enhance the classification accuracy.

引用

页码：208 / 211

页数：4

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