Improving Contact Resistance in MoS2 Field Effect Transistors

被引：0
|
作者：
English, Chris D. [1 ]
Shine, Gautam [1 ]
Dorgan, Vincent E. [2 ]
Saraswat, Krishna C. [1 ]
Pop, Eric [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2014年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：193 / +
页数：2
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