Oxidation study of RF sputtered amorphous and polycrstalline silicon germanium films

被引：0
|
作者：
Leoy, CC
Kan, EWH
Arianto, J
Choi, WK
Wee, ATS
Liu, YJ
机构：
[1] Natl Univ Singapore, Microelect Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Adv Mat Micro & Nano Syst, Singapore MIT Alliance, Singapore 117576, Singapore
[3] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期
关键词：
D O I：
10.1142/S0217979202015133
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxidation study of rf sputtered amorphous and polycrystalline silicon germanium (Si1-xGex) film which was conducted using infrared spectroscopy (FTIR). The oxidation results showed linear oxidation rate of amorphous Si1-xGex and polycrystalline Si1-xGex films in the dry oxygen ambient did not depend on the Ge concentration. We found that Ge nanocrystals were formed from mixed (Si, Ge)O-2 oxides when annealed in forming gas (10%H-2+N-2) while pure N-2 showed formation of Ge clusters.
引用
收藏
页码：4224 / 4227
页数：4
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