Comparative Performance Evaluation of SiC Power Devices for High Temperature and High Frequency Matrix Converter

被引：0

作者：

Safari, Saeed ^{[1
]}

Castellazzi, Alberto ^{[1
]}

Wheeler, Pat ^{[1
]}

机构：

[1] Univ Nottingham, Power Elect Machines & Control Grp PEMC, Nottingham NG7 2RD, England

来源：

2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

With the commercial availability of SiC JFET and BJT, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. The objective of this paper is to assess the performance of bidirectional SiC switch devices for matrix converter. Two 2-phase to 1-phase matrix converters are constructed with SiC JFET and BJT. The improved performance of the SiC switch devices is assessed with reference to measured switching waveforms. Furthermore, the effect of two different SiC switch devices on the overall performance of the matrix converter with particular attention to power circuit losses is investigated.

引用

页码：956 / 962

页数：7

共 50 条

[1] Evaluation of SiC Power Devices for a High Power Density Matrix Converter
Safari, Saeed
Castellazzi, Alberto
Wheeler, Pat
[J]. 2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2012, : 3934 - 3941
[2] Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter
Safari, Saeed
Castellazzi, Alberto
Wheeler, Patrick
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2584 - 2596
[3] High-temperature and high-frequency performance evaluation of 4H-SiC unipolar power devices
Chinthavali, MS
Ozpineci, B
Tolbert, LA
[J]. APEC 2005: TWENTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2005, : 322 - 328
[4] High Temperature Capacitor Performance in a High Power, High Frequency Converter
Bray, Kevin R.
Kosai, Hiroyuki
Schweickart, Daniel L.
Ray, Biswajit
[J]. PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE, 2012, : 276 - 279
[5] Comparative Performance Evaluation of Temperature Dependent Characteristics and Power Converter using GaN, SiC and Si Power Devices
Shah, Faisal Mehmood
Xiao, Han Min
Li, Rui
Awais, Muhammad
Zhou, Guangyang
Bitew, Girmaw Teshager
[J]. PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018), 2018,
[6] A Comparative Evaluation of SiC Power Devices for High-Performance Domestic Induction Heating
Sarnago, Hector
Lucia, Oscar
Burdio, Jose M.
[J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2015, 62 (08) : 4795 - 4804
[7] High-performance SiC Power Devices and Modules with High Temperature Operation
Nakamura, T.
Nakano, Y.
Sasagawa, M.
Otsuka, T.
Aketa, M.
Miura, M.
[J]. 2011 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), 2011, : 51 - 52
[8] SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES
JANZEN, E
KORDINA, O
HENRY, A
CHEN, WM
SON, NT
MONEMAR, B
SORMAN, E
BERGMAN, P
HARRIS, CI
YAKIMOVA, R
TUOMINEN, M
KONSTANTINOV, AO
HALLIN, C
HEMMINGSON, C
[J]. PHYSICA SCRIPTA, 1994, 54 : 283 - 290
[9] High temperature operation of a DC-DC power converter utilizing SiC power devices
Ray, B
Scofield, JD
Spyker, RL
Jordan, B
Ryu, SH
[J]. APEC 2005: TWENTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2005, : 315 - 321
[10] Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices
Almasoudi, Fahad M.
Alatawi, Khaled S.
Matin, Mohammad
[J]. WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2016, 9957

← 1 2 3 4 5 →