Growth and characterization of high quality homoepitaxial ZnO films by RF magnetron sputtering

被引：16
|
作者：
Kim, Il-Soo
Jeong, Sang-Hun
Lee, Byung-Teak
机构：
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea
[2] Korea Basic Sci Inst, Gwangju Ctr, Kwangju 500757, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 06期
关键词：
D O I：
10.1088/0268-1242/22/6/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Zinc oxide (ZnO) films were grown on bulk ZnO substrates by the RF magnetron sputtering system. High resolution x-ray diffraction and photoluminescence spectra of the homoepitaxial films showed sharp and intense peaks with full-width at half-maximum values of 10 - 65 arcsec (( 0 0 0 2) peak) and 106 - 116 meV ( band edge emission), respectively, representing crystalline qualities better than or comparable with ZnO films grown by molecular beam epitaxy. It was also observed that ZnO films grown on Zn-face substrates showed a higher quality than those on O-face wafers. Doping of the films with about 1 wt% Ga resulted in n-type materials with about 1.5 x 10(18) cm(3) free electron density.
引用
收藏
页码：683 / 686
页数：4
相关论文
共 50 条
  • [1] Optical properties of ZnO homoepitaxial thin films grown by an rf-magnetron sputtering method
    Wakaiki, S.
    Kim, D.
    Komura, S.
    Mizoguchi, K.
    Nakayama, M.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 10, 2006, 3 (10): : 3504 - +
  • [2] Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering
    Zhang, X. L.
    Hui, K. N.
    Hui, K. S.
    Singh, Jai
    [J]. MATERIALS RESEARCH BULLETIN, 2013, 48 (03) : 1093 - 1098
  • [3] ZnO films deposited by RF magnetron sputtering
    Li, J
    Wu, ST
    Kang, JY
    [J]. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 2004, : 77 - 80
  • [4] Characterization of (1120) textured ZnO films fabricated by RF magnetron sputtering
    Yanagitani, T
    Tomohiro, S
    Nohara, T
    Matsukawa, M
    Watanabe, Y
    Otani, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (5B): : 3004 - 3007
  • [5] Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates
    Kim, IS
    Jeong, SH
    Kim, SS
    Lee, BT
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : L29 - L31
  • [6] Growth evolution of ZnO thin films deposited by RF magnetron sputtering
    Rosa, A. M.
    da Silva, E. P.
    Amorim, E.
    Chaves, M.
    Catto, A. C.
    Lisboa-Filho, P. N.
    Bortoleto, J. R. R.
    [J]. 14TH LATIN AMERICAN WORKSHOP ON PLASMA PHYSICS (LAWPP 2011), 2012, 370
  • [7] Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering
    Chen, Liang-xian
    Liu, Hao
    Liu, Sheng
    Li, Cheng-ming
    Wang, Yi-chao
    An, Kang
    Hua, Chen-yi
    Liu, Jin-long
    Wei, Jun-jun
    Hei, Li-fu
    Lv, Fan-xiu
    [J]. APPLIED SURFACE SCIENCE, 2018, 431 : 152 - 159
  • [8] Growth and Characterization of High Quality ZnS Thin Films by RF Sputtering
    Mukherjee, C.
    Rajiv, K.
    Gupta, P.
    Sinha, A. K.
    Abhinandan, L.
    [J]. INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY, 2012, 1451 : 230 - 232
  • [9] Optical characterization of ZnO thin films deposited by RF magnetron sputtering method
    TANG Ning
    [J]. Science China Technological Sciences, 2009, (08) : 2200 - 2203
  • [10] Characterization of ZnO thin films grown on various substrates by RF magnetron sputtering
    Lee, Kyu-Hang
    Cho, Nam-In
    Yun, Eui-Jung
    Nam, H. G.
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (13) : 4241 - 4245
12345