Impact of soft and hard breakdown on analog and digital circuits

被引：21
|
作者：
Avellán, A [1 ]
Krautschneider, WH [1 ]
机构：
[1] Tech Univ Hamburg, Inst Mikroelekt, D-21071 Hamburg, Germany
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2004年 / 4卷 / 04期
关键词：
analog circuits; dielectric breakdown; digital circuits; modeling; MOSFETs;
D O I：
10.1109/TDMR.2004.836729
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of gate oxide breakdown of one MOS transistor on the functionality of simple analog and digital circuits is studied. The main changes in, the transistor behavior such as the additional gate current as well as transconductance and threshold voltage degradation are pointed out and their respective impact on circuit characteristics is analyzed. With this approach, it is possible to identify critical transistors during the, design stage and implement appropriate countermeasures. Depending on the application, some circuits may be, functional even after breakdown of one of their transistors.
引用
收藏
页码：676 / 680
页数：5
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