Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold

被引：3
|
作者：
Grekhov, I. V. [1 ]
Rodin, P. B. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 02期
关键词：
D O I：
10.1134/S1063785007020265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that a model of multistreamer switching from the blocking to conducting state in high-voltage diode structures cannot consistently explain the phenomenon of ultrafast switching of such silicon structures into the conducting state, which was experimentally observed in the rapid growth of the reverse bias voltage in strong (similar to 1 MV/cm) electric fields.
引用
收藏
页码：180 / 183
页数：4
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