Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

被引：1
|
作者：
Kopach, V. R. [1 ]
Kirichenko, M. V. [1 ]
Khrypunov, G. S. [1 ]
Zaitsev, R. V. [1 ]
机构：
[1] Natl Tech Univ, Kharkiv Polytech Inst, UA-61002 Kharkov, Ukraine
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 06期
关键词：
BACK SURFACE REFLECTOR;
D O I：
10.1134/S106378261006014X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 A mu m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer > 1 A mu m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.
引用
收藏
页码：772 / 777
页数：6
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