Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

被引：6
|
作者：
Korsunskaya, NE [1 ]
Kaganovich, EB [1 ]
Khomenkova, LY [1 ]
Bulakh, BM [1 ]
Dzhumaev, BR [1 ]
Beketov, GV [1 ]
Manoilov, EG [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
关键词：
porous silicon; photoluminescence; excitation bands; surface substances; layer structure;
D O I：
10.1016/S0169-4332(00)00448-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Plenty photoluminescence (PL) and plenty photoluminescence excitation (PLE) spectra, as well as layer structure and surface substances on Si crystallites of porous silicon prepared by different technique, have been investigated by photoluminescence, atomic force microscope (AFM) and infrared (IR) transmission methods. It is shown that PLE spectra, consisted of several excitation bands, do not depend on Si crystallites sizes. The nature of excitation bands is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：349 / 353
页数：5
相关论文
共 50 条
  • [1] Excitation spectra of the visible photoluminescence of anodized porous silicon
    Motohiro, Tomoyoshi, 1600, (31):
  • [2] Ballistic effect and photoluminescence excitation in porous silicon
    Torchynska, TV
    Rodriguez, MM
    Khomenkova, LY
    SURFACE SCIENCE, 2003, 532 : 1204 - 1208
  • [3] Linear Polarization of Photoluminescence Excitation and Emission Spectra of Porous Silicon
    Lee, Tae-Ho
    Jeon, Ki-Seok
    Lee, Ki-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (01) : 64 - 71
  • [4] EXCITATION-SPECTRA OF THE VISIBLE PHOTOLUMINESCENCE OF ANODIZED POROUS SILICON
    MOTOHIRO, T
    KACHI, T
    MIURA, F
    TAKEDA, Y
    HYODO, S
    NODA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3A): : L207 - L209
  • [5] Several ways of excitation and degradation processes of porous silicon photoluminescence
    Korsunskaya, NE
    Khomenkova, LY
    Dzhumaev, BR
    Smiyan, OD
    Torchinskaya, TV
    Goldstein, Y
    Savir, E
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 305 - 309
  • [6] Temperature effect on photoluminescence excitation process of porous silicon
    Korsunskaya, NE
    Torchinskaya, TV
    Dzhumaev, BR
    Khomenkova, LY
    Bulakh, BM
    Many, A
    Goldstein, Y
    Savir, E
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 511 - 514
  • [7] Effect of oxidation treatments on photoluminescence excitation of porous silicon
    Rigakis, N
    Hilliard, J
    AbuHassan, L
    Hetrick, JM
    Andsager, D
    Nayfeh, MH
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 440 - 444
  • [8] Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride
    Liu, XS
    Calata, JN
    Liang, HY
    Shi, WZ
    Lin, XY
    Lin, KX
    Qin, GG
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 141 - 146
  • [9] Anodisation time dependent shift of photoluminescence excitation and emission spectra in porous silicon
    Rajaraman, R
    Gopalan, P
    Premila, M
    SOLID STATE COMMUNICATIONS, 1997, 102 (01) : 65 - 70
  • [10] Anodization time dependent shift of photoluminescence excitation and emission spectra in porous silicon
    Indira Gandhi Cent for Atomic, Research, Kalpakkam, India
    Solid State Commun, 1 (65-70):
12345