Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition

被引：24

作者：

Ullrich, B ^{[1
]}

Tomm, JW

Dushkina, NM

Tomm, Y

Sakai, H

Segawa, Y

机构：

[1] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA

[2] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany

[3] Tokyo Univ Agr & Technol, Dept Mech & Syst Engn, Tokyo 1848588, Japan

[4] Hahn Meitner Inst Berlin, D-14109 Berlin, Germany

[5] Hiroshima Kokusai Gakuin Univ, Fac Engn, Aki Ku, Hiroshima 7390321, Japan

[6] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 01期

关键词：

thin films; laser processing; X-ray scattering; photoconductivity and photovoltaics;

D O I：

10.1016/S0038-1098(00)00267-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By means of alternating (AC) and direct (DC) photocurrent measurements, the photoelectric dichroism of thin CdS films on glass is demonstrated at 300 K. The samples are formed by pulsed-laser deposition, and defined orientations, i.e, the c-axis perpendicular (CdSperpendicular to) or parallel (CdSparallel to) to the glass substrate, are achieved by variation of the laser fluence. The AC peaks of the photocurrent spectra of CdSperpendicular to and CdSparallel to are separated by 55 meV. The absorbance spectra prove that the peak shift is caused by absorption dichroism, which is comparable with that of single crystal CdS. The separation of the DC spectra (140 meV) clearly exceeds the value of the absorption dichroism due to long-term trapping of the photocarriers at the surface of the films. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：33 / 35

页数：3

共 50 条

[1] Absorption dichroism of thin CdS films formed by pulsed-laser deposition
Ullrich, B
Sakai, H
[J]. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 115 - 118
[2] Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition
Ullrich, B
Sakai, H
Segawa, Y
[J]. THIN SOLID FILMS, 2001, 385 (1-2) : 220 - 224
[3] Characteristics of SrS:Cu thin-film electroluminescent device fabricated by pulsed-laser deposition
Choe, JY
Blomquist, SM
Morton, DC
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4124 - 4126
[4] Preparation of thin film GaAs on glass by pulsed-laser deposition
Ullrich, B
Erlacher, A
Yano, S
Schroeder, R
Gerasimov, TG
Haugan, HJ
[J]. PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS II, 2003, 4977 : 180 - 187
[5] Homoepitaxial ZnO Thin Films Fabricated by Using Pulsed-Laser Deposition
von Wenckstern, Holger
Brandt, Matthias
Schmidt, Heidemarie
Hanisch, Christian
Benndorf, Gabriele
Hochmuth, Holger
Lorenz, Michael
Grundmann, Marius
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 3064 - 3067
[6] Thin-film CdS formed with pulsed-laser deposition towards optical and hybrid device applications
Bruno Ullrich
[J]. Journal of Materials Science: Materials in Electronics, 2007, 18 : 1105 - 1108
[7] Thin-film CdS formed with pulsed-laser deposition towards optical and hybrid device applications
Ullrich, Bruno
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (11) : 1105 - 1108
[8] Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser deposition
Khanlary, M
Townsend, P
Ullrich, B
Hole, DE
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
[9] ZEOLITE MEMBRANES FABRICATED BY PULSED-LASER DEPOSITION
PEACHEY, NM
ESPINOZA, BF
DYE, RC
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 95 - PETR
[10] CdS thin films formed on flexible plastic substrates by pulsed-laser deposition
Acharya, K. P.
Skuza, J. R.
Lukaszew, R. A.
Liyanage, C.
Ullrich, B.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (19)

← 1 2 3 4 5 →