Spectral transformers of VUV radiation on the basis of wide-gap oxides

被引:17
|
作者
Lushchik, A [1 ]
Lushchik, C [1 ]
Kotlov, A [1 ]
Kudryavtseva, I [1 ]
Maaroos, A [1 ]
Nagirnyi, V [1 ]
Vasil'chenko, E [1 ]
机构
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
关键词
luminescence; photon multiplication; VUV phosphors; alpha-Al2O3;
D O I
10.1016/j.radmeas.2004.01.013
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
The processes connected with obtaining luminescence with the quantum yield (QY) > 1 at the excitation of wide-gap crystals (E-g > 5 eV) by photons of hv(ex) less than or equal to 30 eV have been discussed. A particular attention is paid to the process of photon multiplication (PM) at the cascade recombination of an electron and a hole with the participation of a two-electron F centre in MgO crystals (hv(ex) > 7.8 eV, two emitted photons of 2.4 and 3.1 eV) and to the PM process in alpha-Al2O3:Mg2+, Ti4+ due to the interaction of a mobile anion exciton with a pair of spatially correlated Mg2+ and Ti4+ impurity ions (hv(ex) = 9 eV, two emitted photons of similar to5 and 1.7 eV). In addition to LuF3:Pr3+ and LiGdF4:Eu3+ photon cutting materials, radiation-resistant doped metal oxides can be considered as promising radiation-resistant spectral transformers with QY > 1 for gas (xenon) discharge devices. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:747 / 752
页数:6
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