Preparation and characterization of GaN nanowires

被引：0
|
作者：
Xue, CS [1 ]
Yang, YG
Ma, HL
Zhuang, HZ
Ma, J
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission-electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX centre to valence band.
引用
收藏
页码：568 / 570
页数：3
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