High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 μm thick intrinsic layer

被引：2

作者：

Liu, Qing ^{[1
]}

Zhou, Dong ^{[1
]}

Xu, Weizong ^{[1
]}

Chen, Dunjun ^{[1
]}

Ren, Fangfang ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

Lu, Hai ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2021年 / 39卷 / 02期

基金：

国家重点研发计划;

关键词：

SILICON-CARBIDE; RADIATION; DIODES; UV;

D O I：

10.1116/6.0000829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a large size x-ray detector with a 25 mm(2) active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4x10(4)mu CGy(-1)cm(-2), good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray photons is further realized with energy resolutions of 1.1 and 4.9 keV at 5.9 and 59.5 keV, respectively. This work thus suggests the significant potentials of wide-bandgap SiC semiconductor for photon-resolved x-ray detection in a harsh environment.

引用

页数：6

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